DMPI Dominion D-Series | Waveguide Probes
Tiny structures, extreme frequencies: Precise on-wafer contact enables demanding mmWave and THz measurements.
- ✓ Frequency Range: 140 GHz to 1.1 THz
- ✓ Probe Pitch: 25–100 µm
- ✓ Contact Resistance: typ. < 0.04 Ω (Gold)
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Waveguide Probes for On-Wafer and S-Parameter Measurements
DMPI Dominion D Series: Contacting RF Devices in the Millimeter-Wave and THz Range
For S-parameter measurements on MMICs and other RF semiconductor devices, a low-loss transition between the wafer and the measurement system is essential. This is where the Dominion Waveguide Probes from DMPI come in: The waveguide probes contact GSG pads directly on the wafer and carry RF signals to the measurement system. Their low insertion loss minimizes signal attenuation at high frequencies.
Depending on the waveguide band, the operating frequency ranges extend from 140 GHz to 1.1 THz. Model-dependent GSG contact pitches from 25 to 100 µm allow probing of closely spaced contact pads.
Matching Waveguide Band, GSG Pitch, and Probe Configuration
Choosing the right model starts with the required frequency range. Each waveguide band offers specific GSG contact pitches and probe configurations. The GSG pitch must match the contact pads on the wafer. Whether an S-Type, T-Type, or compact C-Type probe is suitable also depends on the mechanical mounting arrangement of the probe station.
For measurements across a wider frequency range, dual-band probes are available up to 170 GHz or 220 GHz. These probes feature an integrated diplexer that separates the signal paths: Lower frequencies are transmitted through the coaxial connection, while higher frequencies use the waveguide connection. This enables continuous frequency sweeps, provided the VNA and frequency extension modules support the required configuration.
Alternative Products
While the Dominion D Series uses waveguide technology, the GGB PICOPROBE 40-110 Series offers coaxial probes for on-wafer and S-parameter measurements up to 110 GHz. These probes allow the reflection and transmission characteristics of RF devices to be measured directly on the wafer, both during development and semiconductor manufacturing tests.
Related Product Categories
Do the Frequency Band, GSG Pitch, and Measurement Setup Match?
Avoid compatibility issues when selecting your waveguide probe. Contact our RF specialists to determine which Dominion D Series probe matches your contact pads, frequency range, and probe station.
Variants
Specifications
| Frequency Range | 140 GHz to 1.1 THz, depending on the model |
|---|---|
| Broadband Versions | DC to 170 GHz or DC to 220 GHz, depending on the measurement system configuration |
| Contact Configuration | Ground-Signal-Ground (GSG) |
| GSG Contact Pitch | 25 to 100 µm, depending on the model |
| Waveguide Sizes | WR5.1, WR4.3, WR3.4, WR2.8, WR2.2, WR1.5, and WR1.0 |
| Probe Body Styles | S-Type (short), T-Type (tall), and C-Type (compact), depending on the frequency band |
| Insertion Loss | Typically 1.5 to 8.0 dB, depending on the frequency band and configuration |
| Return Loss | Typically 13 to 15 dB, depending on the frequency band and configuration |
| Contact Resistance | Typically below 0.04 Ω when probing gold and below 0.30 Ω when probing aluminum |
Options & Accessories
| DC Bias Tee | Optionally integrated, with GPPO connector for applying DC bias to the device under test (DUT) |
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Scope of Delivery
| Device(s) from the DMPI D Series |
Applications
| On-Wafer Measurements | Electrical characterization of integrated RF circuits and semiconductor devices directly on the wafer |
|---|---|
| S-Parameter Measurements | Measurement of transmission and reflection characteristics using a vector network analyzer (VNA) |
| MMIC Characterization | Measurements on monolithic microwave integrated circuits |
| Millimeter-Wave and THz Measurements | Characterization of devices in the millimeter-wave and submillimeter-wave frequency ranges |
| Broadband Network Analysis | Continuous frequency sweeps using compatible dual-band measurement systems |
| Active RF Device Measurements | Characterization under applied DC bias using an optionally integrated DC bias tee |
| Semiconductor Development | Measurement of electrical characteristics for device modeling and Process Design Kits (PDKs) |